Description: This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 300 W Maximum Drain-Source Voltage 'Vds': 75 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 80 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 117 nC Rise Time (tr): 100 nS Drain-Source Capacitance (Cd): 730 pF Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm Exceptional dv/dt capability 100% avalanche tested The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Package Included: 10pcs STP75NF75 P75NF75 Power MOSFET Transistor TO-220 80A 75V N-Channel
Price: 10.98 USD
Location: Villa Park, Illinois
End Time: 2024-08-10T01:54:42.000Z
Shipping Cost: N/A USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Mounting Style: Through-Hole
Package/Case: TO-220
MPN: STP75NF75
Transistor Category: Power Transistor
Brand: STMicroelectronics
Function: Power Transistor
Series: STP75NF75
Type: N-Channel Enhancement Mode MOSFET
Number of Pins: 3
Maximum Power Dissipation: 300 W
Model: P75NF75
Packaging: Tube
